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22 May 2013
Today the European Patent Office (EPO) published CMOSIS' first patent ever granted by the EPO. The publication EP 2075843 B1 grants patent protection for a new CMOS image sensor pixel architecture. The patented pixel architecture has a structure and doping profiles allowing the manufacture of pixels with high charge collection efficiency and low diffusion crosstalk in combination with a relatively small physical photodiode size compared to pixel architectures.This is realized by implementing a collection area deeper below the silicon surface and unrelated junctions in the pixel. This allows for full flexibility in design of the photodiode capacitance and therefore the optimization of pixel performance parameters as full well charge capacity, conversion gain, noise, ... .