CMOSIS added to the current line of CMV2000 and CMV4000 image sensors, Near Infra Red sensitivity-enhanced versions.
These two new devices, with product numbers CMV2000-2E12M1PP and CMV4000-2E12M1PP, are processed on 12 µm epi Si wafers. The thicker epi-layer wafer starting material increases significantly the QE for wavelengths above 600 nm. Around 900 nm the QE is about doubled and increases from 8% to 16%.
CMV2000 and CMV4000 E12 devices are available in sample quantities.